SPN8882

Features: `30V/40A,RDS(ON)= 10m@VGS=10V`30V/40A,RDS(ON)= 14m@VGS=4.5V`Super high density cell design for extremely low DS (ON)`Exceptional on-resistance and maximum DC current capability`TO-252,TO-251 package designApplication·Power Management in Note book·Powered System·DC/DC Converter·Load Switc...

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SeekIC No. : 004501283 Detail

SPN8882: Features: `30V/40A,RDS(ON)= 10m@VGS=10V`30V/40A,RDS(ON)= 14m@VGS=4.5V`Super high density cell design for extremely low DS (ON)`Exceptional on-resistance and maximum DC current capability`TO-252,TO-2...

floor Price/Ceiling Price

Part Number:
SPN8882
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/12/24

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Product Details

Description



Features:

`30V/40A,RDS(ON)= 10m@VGS=10V
`30V/40A,RDS(ON)= 14m@VGS=4.5V
`Super high density cell design for extremely low DS (ON)
`Exceptional on-resistance and maximum DC current capability
`TO-252,TO-251 package design



Application

·Power Management in Note book
·Powered System
·DC/DC Converter
·Load Switch



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate Source Voltage
VGSS
±20
V
Continuous Drain Current TA=25
ID
60
A
TA=100
40
Pulsed Drain Current
IDM
100
A
Continuous Drain Current
IS
50
A
Single Pulse Drain to Source Avalanche Energy − Starting
(TJ=25°C , VDD=27V , VGS=10V , IAS=28A , L=0.1mH )
EAS
41
mJ
Power Dissipation TA=25 TO-252-2L
PD
40
W
TO-251
55
Operating Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RJA
100
/W



Description

DESCRIPTION APPLICATIONS The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.




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