Features: `30V/40A,RDS(ON)= 10m@VGS=10V`30V/40A,RDS(ON)= 14m@VGS=4.5V`Super high density cell design for extremely low DS (ON)`Exceptional on-resistance and maximum DC current capability`TO-252,TO-251 package designApplication·Power Management in Note book·Powered System·DC/DC Converter·Load Switc...
SPN8882: Features: `30V/40A,RDS(ON)= 10m@VGS=10V`30V/40A,RDS(ON)= 14m@VGS=4.5V`Super high density cell design for extremely low DS (ON)`Exceptional on-resistance and maximum DC current capability`TO-252,TO-2...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

|
Parameter |
Symbol |
Typical |
Unit | ||
| Drain-Source Voltage |
VDSS |
30 |
V | ||
| Gate Source Voltage |
VGSS |
±20 |
V | ||
| Continuous Drain Current | TA=25 |
ID |
60 |
A | |
| TA=100 |
40 | ||||
| Pulsed Drain Current |
IDM |
100 |
A | ||
| Continuous Drain Current |
IS |
50 |
A | ||
| Single Pulse Drain to Source Avalanche Energy − Starting (TJ=25°C , VDD=27V , VGS=10V , IAS=28A , L=0.1mH ) |
EAS |
41 |
mJ | ||
| Power Dissipation | TA=25 | TO-252-2L |
PD |
40 |
W |
| TO-251 |
55 | ||||
| Operating Junction Temperature |
TJ |
150 |
|||
| Storage Temperature Range |
TSTG |
-55/150 |
|||
| Thermal Resistance-Junction to Ambient |
RJA |
100 |
/W | ||
DESCRIPTION APPLICATIONS The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.