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SPP03N60C3

MOSFET MOSFET N-Channel

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SeekIC No. : 00146862 Detail

SPP03N60C3: MOSFET MOSFET N-Channel

SPP03N60C3 Data Sheet

floor Price/Ceiling Price

US $ .56~.91 / Piece | Get Latest Price
Part Number:
SPP03N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $.91
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 1.4 Ohms
Continuous Drain Current : 3.2 A


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP_B SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 2
3.2		 3.21)
21)		 A
Pulsed drain current, tp limited by Tjmax ID puls 9.6 9.6 A
Avalanche energy, single pulse
ID=2.4A, VDD=50V		 EAS 100 100 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=3.2A, VDD=50V		 EAR 0.2 0.2
Avalanche current, repetitive tAR limited by Tjmax IAR 3.2 3.2 A
Gate source voltage static VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 38 29.7 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C		 dv/dt 50 V/ns



Parameters:

Technical/Catalog InformationSPP03N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C3.2A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 25V
Power - Max38W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP03N60C3
SPP03N60C3
SPP03N60C3IN ND
SPP03N60C3INND
SPP03N60C3IN



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