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SPP42N03S2L-13

MOSFET N-CH 30V 42A

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SeekIC No. : 00161077 Detail

SPP42N03S2L-13: MOSFET N-CH 30V 42A

SPP42N03S2L-13 Data Sheet

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Part Number:
SPP42N03S2L-13
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Processing time
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 42 A
Resistance Drain-Source RDS (on) : 12.9 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 42 A
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 12.9 m Ohms


Features:

• N-channel
• Enhancement mode
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Avalanche rated
• dv /dt rated


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current1)

 ID TC=25 °C 42 A
TC=100 °C 42
Pulsed drain current
 ID puls TC=25 °C 248
Avalanche energy, single pulse
 EAS ID=42 A, RGS=25 110 mJ
Repetitive avalanche energy EAR limited by T jmax2)
 8 mJ
Reverse diode dv/dt

 dv/dt ID=42 A, VDS=24 V,
di /dt =200 A/s,
T j,max=175 °C		 6 kV/s
Gate source voltage VGS   ±20 V
Power dissipation
 Ptot TC=25 °C 83 W
Operating and storage temperature Tj , Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  

1) Current is limited by bondwire; with an RthJC=1.8 K/W the chip is able to carry 64 A at 25°C, for detailed information
see app.-note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test




Parameters:

Technical/Catalog InformationSPP42N03S2L-13
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C42A
Rds On (Max) @ Id, Vgs12.9 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds 1130pF @ 25V
Power - Max83W
PackagingTube
Gate Charge (Qg) @ Vgs30.5nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPP42N03S2L 13
SPP42N03S2L13
SPP42N03S2L 13IN ND
SPP42N03S2L13INND
SPP42N03S2L-13IN



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