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SPP80N03S2L-04

MOSFET N-KANAL POWER MOS

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SeekIC No. : 00151447 Detail

SPP80N03S2L-04: MOSFET N-KANAL POWER MOS

SPP80N03S2L-04 Data Sheet

floor Price/Ceiling Price

US $ .89~1.77 / Piece | Get Latest Price
Part Number:
SPP80N03S2L-04
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.77
  • $1.52
  • $1.14
  • $.89
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0042 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0042 Ohms


Features:

· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated


Specifications

Parameter Symbol Value Unit
Continuous drain current 1)
TC = 25 °C
 ID 80
80		 A
Pulsed drain current
TC = 25 °C		 ID puls 320
Avalanche energy, single pulse
ID =80A, VDD = 25 V, RGS = 25		 EAS 380 mJ
Repetitive avalanche energy, limited by Tjmax 2) EAR 18
Reverse diode dv/dt
IS = 80 A, VDS = 24 , di/dt = 200 A/s,
Tjmax = 175 °C
 dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C		 Ptot 188 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56

1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test




Parameters:

Technical/Catalog InformationSPP80N03S2L-04
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4.2 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 3900pF @ 25V
Power - Max188W
PackagingTube
Gate Charge (Qg) @ Vgs105nC @ 10V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP80N03S2L 04
SPP80N03S2L04



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