SPP80N03S2L-06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 5.9 m Ohms


Features:

· N-Channel
· Enhancement mode
· Logic Level
· Low On-Resistance RDS(on)
· Excellent Gate Charge x R_DS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current 1) TC = 25 °C	ID	80 80	A
Pulsed drain current TC = 25 °C	ID puls	320
Avalanche energy, single pulse ID =20A, VDD = 25 V, RGS = 25	EAS	240	mJ
Repetitive avalanche energy, limited by Tjmax 2)	EAR	15
Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	150	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

¹Current limited by bondwire ; with an R_thJC = 0.5K/W the chip is able to carry I_D= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
²Defined by design. Not subject to production test

Parameters:

Technical/Catalog Information	SPP80N03S2L-06
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	6.2 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	2530pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	68nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPP80N03S2L 06 SPP80N03S2L06 SPP80N03S2L 06IN ND SPP80N03S2L06INND SPP80N03S2L-06IN