SPP80N06S2L-H5

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 190nC @ 10V
Power - Max: 300W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 80A
Input Capacitance (Ciss) @ Vds: 6640pF @ 25V
Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: P-TO220-3
Vgs(th) (Max) @ Id: 2V @ 230µA


Features:

· N-Channel
· Enhancement mode
· 175°C operating temperature
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current1) TC = 25 °C	ID	80 80	A
Pulsed drain current TC = 25 °C	ID puls	320
Avalanche energy, single pulse ID =80 A, VDD = 25 V, RGS = 25	EAS	700	mJ
Reverse diode dv/dt IS =80 A, VDS = 44 V, di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	300	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

¹ Current limited by bondwire ; with an R_thJC = 0.5K/W the chip is able to carry I_D= 170A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos

Parameters:

Technical/Catalog Information	SPP80N06S2L-H5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	5 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	6640pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	190nC @ 10V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPP80N06S2L H5 SPP80N06S2LH5