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SPPX2N60S5

Features: `N-Channel`Enhancement mode` Ultra low gate charge` Avalanche rated`dv/dt rated` 150operating temperatureSpecifications Parameter Symbol Value Unit Drain source voltage VDSS 600 A Continuous drain currentTC = 25 TC = 100 ID 11.37.1 Pulsed drain current TC = 25 I...

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SPPX2N60S5: Features: `N-Channel`Enhancement mode` Ultra low gate charge` Avalanche rated`dv/dt rated` 150operating temperatureSpecifications Parameter Symbol Value Unit Drain source voltage VDSS 6...

SPPX2N60S5 Data Sheet

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Part Number:
SPPX2N60S5
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5000

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Product Details

Description



Features:

`N-Channel
`Enhancement mode
` Ultra low gate charge
` Avalanche rated
`dv/dt rated
` 150operating temperature


Specifications

Parameter Symbol Value Unit
Drain source voltage VDSS 600 A
Continuous drain current
TC = 25 TC = 100 		ID 11.3
7.1
Pulsed drain current TC = 25 ID puls 22.6
Avalanche energy, single pulse
ID = 46 A, VDD = 25 V, RGS = 25 		EAS 340 mJ
Avalanche current,periodic limited by Tjmax IAR tbd A
Avalanche energy (10 kHz, limited by Tjmax) EAR tbd mJ
Reverse diode dv/dt
IS = 11.3 A,VDS<VDSS ,di/dt = 100 A/s,
Tjmax =150		 dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation TC = 25 Ptot 120 W
Operating temperature Tj -55 ...+150
Storage temperature Tstg -55 ...+150
IEC climatic category; DIN I



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