SPU11N10

MOSFET N-CH 100V 10.5A IPAK

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SeekIC No. : 003430604 Detail

SPU11N10: MOSFET N-CH 100V 10.5A IPAK

floor Price/Ceiling Price

Part Number:
SPU11N10
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Series: SIPMOS® Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 10.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 21µA Gate Charge (Qg) @ Vgs: 18.3nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 400pF @ 25V
Power - Max: 50W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: P-TO251-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Input Capacitance (Ciss) @ Vds: 400pF @ 25V
Power - Max: 50W
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 10.5A
Gate Charge (Qg) @ Vgs: 18.3nC @ 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: P-TO251-3
Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 21µA


Features:

· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated




Specifications

Parameter Symbol Value Unit
Continuous drain current1)
TC = 25 °C
TC=100°C
ID 10.5
7.8
A
Pulsed drain current
TC = 25 °C
ID puls 41.2
Avalanche energy, single pulse
ID =10.5A, VDD = 25 V, RGS = 25
EAS 60 mJ
Reverse diode dv/dt
IS =10.5 A, VDS =80 , di/dt = 200 A/s,
Tjmax = 175 °C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 50 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  



Parameters:

Technical/Catalog InformationSPU11N10
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10.5A
Rds On (Max) @ Id, Vgs170 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs18.3nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPU11N10
SPU11N10



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