SPU11N10

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Input Capacitance (Ciss) @ Vds: 400pF @ 25V
Power - Max: 50W
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 10.5A
Gate Charge (Qg) @ Vgs: 18.3nC @ 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: P-TO251-3
Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 21µA


Features:

· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current1) TC = 25 °C TC=100°C	ID	10.5 7.8	A
Pulsed drain current TC = 25 °C	ID puls	41.2
Avalanche energy, single pulse ID =10.5A, VDD = 25 V, RGS = 25	EAS	60	mJ
Reverse diode dv/dt IS =10.5 A, VDS =80 , di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	50	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

Parameters:

Technical/Catalog Information	SPU11N10
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10.5A
Rds On (Max) @ Id, Vgs	170 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds	400pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	18.3nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPU11N10 SPU11N10