MOSFET COOL MOS N-CH 650V 47A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 47 A | ||
| Resistance Drain-Source RDS (on) : | 0.07 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247 | Packaging : | Tube |
|
Parameter |
Symbol |
Value |
Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID |
47 30 |
A |
| Pulsed drain current, tp limited by Tjmax |
ID puls |
141 | |
| Avalanche energy, single pulse ID= 10A, VDD=50V |
EAS |
1800 |
mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=20A, VDD=50V |
EAR |
1 | |
| Avalanche current, repetitive tAR limited by Tjmax |
IAR |
20 |
A |
| Gate source voltage static |
VGS |
±20 |
V |
| Gate source voltage AC (f >1Hz) |
VGS |
±30 | |
| Power dissipation TC = 25 °C |
Ptot |
415 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
| Technical/Catalog Information | SPW47N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 47A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 6800pF @ 25V |
| Power - Max | 415W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 320nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPW47N60C3 SPW47N60C3 SPW47N60C3IN ND SPW47N60C3INND SPW47N60C3IN |