SPW47N60C3

MOSFET COOL MOS N-CH 650V 47A

product image

SPW47N60C3 Picture
SeekIC No. : 00145730 Detail

SPW47N60C3: MOSFET COOL MOS N-CH 650V 47A

floor Price/Ceiling Price

US $ 4.79~7.27 / Piece | Get Latest Price
Part Number:
SPW47N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $7.27
  • $6.11
  • $5.61
  • $4.79
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 47 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Continuous Drain Current : 47 A
Resistance Drain-Source RDS (on) : 0.07 Ohms


Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
47
30
A
Pulsed drain current, tp limited by Tjmax
ID puls
141
Avalanche energy, single pulse
ID= 10A, VDD=50V
EAS
1800
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=20A, VDD=50V
EAR
1
Avalanche current, repetitive tAR limited by Tjmax
IAR
20
A
Gate source voltage static
VGS
±20
V
Gate source voltage AC (f >1Hz)

VGS

±30
Power dissipation
TC = 25 °C
Ptot
415
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPW47N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C47A
Rds On (Max) @ Id, Vgs70 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 6800pF @ 25V
Power - Max415W
PackagingTube
Gate Charge (Qg) @ Vgs320nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPW47N60C3
SPW47N60C3
SPW47N60C3IN ND
SPW47N60C3INND
SPW47N60C3IN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Circuit Protection
Discrete Semiconductor Products
Power Supplies - External/Internal (Off-Board)
Batteries, Chargers, Holders
Line Protection, Backups
View more