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MFG:POLYFET  

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Part Number: SQ742

 

MFG: POLYFET

 

 

Description: Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.Suitable for M...


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SQ742 General Description


Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others. 
    
"Polyfet"   process features low feedback and output capacitances resulting in high F  transistors with high input impedance and high efficiency.

SQ742 Maximum Ratings

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
190 Watts
0.85/W
200
-65  to 150
1.7.58 A
125V
125V
20V

SQ742 datasheet

SQ742
PDF/DataSheet Download

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  • ·SQ721
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  • ·SQ741
  • POLYFET [Polyfet RF Devices] 
  • SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 
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