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SRAF05100

Features: * Low Forward Voltage.* Low Switching noise.* High Current Capacity* Guarantee Reverse Avalanche.* Guard-Ring for Stress Protection.* Low Power Loss & High efficiency.* 125 Operating Junction Temperature* Low Stored Charge Majority Carrier Conduction.* Plastic Material used Carries U...

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SRAF05100: Features: * Low Forward Voltage.* Low Switching noise.* High Current Capacity* Guarantee Reverse Avalanche.* Guard-Ring for Stress Protection.* Low Power Loss & High efficiency.* 125 Operating J...

SRAF05100 Data Sheet

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Part Number:
SRAF05100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 125 Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory


Specifications

Characteristic Symbol SRAF05 Unit
70 80 90 100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage		 VRRM
VRWM
VR		 70 80 90 100 V
RMS Reverse Voltage VR(RMS) 49 56 63 70 V
Average Rectifier Forward Current IF(AV) 5.0 A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)		 IFM 10 V
Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 100 V
Operating and Storage Junction Temperature Range TJ , TSTG -65 to +125



Description

---Using the Schottky Barrier principle SRAF05100 with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.




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