Features: • Replaces DO-4 and DO-5 • Ultra Fast Recovery• PIV to 1200 Volts• Low Reverse Leakage• Hermetically Sealed Void-Free Construction 1/• Monolithic Single Chip Construction• High Surge Rating• Low Thermal Resistance• Equivalent to 1N669...
SRM6UF: Features: • Replaces DO-4 and DO-5 • Ultra Fast Recovery• PIV to 1200 Volts• Low Reverse Leakage• Hermetically Sealed Void-Free Construction 1/• Monolithic Single...
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| Maximum Ratings | SYMBOL | VALUE | UNITS |
| Peak Repetitive Reverse and SRM6UF DC Blocking Voltage SRM8UF SRM10UF SRM12UF |
VRRM VRWM VR |
600 800 1000 1200 |
Volts |
| Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TC = 100 oC |
Io | 20 | Amps |
| Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25oC) |
IFSM | 375 | Amps |
| Operating and Storage Temperature | Top & Tstg | -65 TO +175 | °C |
| Maximum Thermal Resistance Junction to Case |
RJL RJE RJC |
3.0 2.5 1.0 |
°C/W |