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SS10PH10

Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Guardring for overvoltage protection• High Barrier Technology, Tj = 175 °C Maximum• Low leakage current• Meets MSL level 1, per J-STD-020C• Solder Dip 260 °C, 40 second...

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SeekIC No. : 004503066 Detail

SS10PH10: Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Guardring for overvoltage protection• High Barrier Technology, Tj = 175 °C MaximumR...

SS10PH10 Data Sheet

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Part Number:
SS10PH10
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• High Barrier Technology, Tj = 175 °C Maximum
• Low leakage current
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC






Application

For use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application.






Specifications

PARAMETER SYMBOL SS10PH9 SS10PH10 UNIT
Device marking code 10H9 1010
Maximum repetitive peak reverse voltage VRRM 9 10 V
Maximum average forward rectified current (see Fig. 1) IF(AV) 10 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load		 IFSM 2000 A
Non-repetitive avalanche energy
at IAS = 2 A, L = 10 mH, Tj = 25 °C		 EAS 20 mJ
Voltage rate of change (rated VR) dv/dt 10000 V/s
Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C





Description

SS10PH9 & SS10PH10 datasheet




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