SS115

Product :
Peak Reverse Voltage :
Forward Continuous Current :
Max Surge Current :
Configuration :
Recovery Time :
Forward Voltage Drop :
Maximum Reverse Leakage Current :
Maximum Power Dissipation :
Operating Temperature Range :
Mounting Style :
Package / Case :
Packaging : Reel


Features:

 For surface mounted application

 Metal to silicon rectifier, majority carrier conduction

 Low forward voltage drop

 Easy pick and place

 High surge current capability

 Plastic material used carriers Underwriters
Laboratory Classification 94V-O

 Epitaxial construction

 High temperature soldering:
260oC/ 10 seconds at terminals

Specifications

Type Number	Symbol	SS115	Units
Maximum Recurrent Peak Reverse Voltage	VRRM	150	V
Maximum RMS Voltage	VRMS	105	V
Maximum DC Blocking Voltage	VDC	150	V
Maximum Average Forward Rectified Current at TL (See Fig. 1)	I(AV)	1.0	A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method )	IFSM	30	A
Maximum Instantaneous Forward Voltage (Note 1) @ 25OC 1.0A @ 125OC 1.0A @ 25OC 2.0A @ 125OC 2.0A	VF	0.82 0.67 0.89 0.75	V
Maximum DC Reverse Current @ TA =25 at Rated DC Blocking Voltage @ TA=125	IR	0.05	mA mA
		0.5
Typical Junction Capacitance (Note 3)	Cj	50	pF
Typical Thermal Resistance ( Note 2 )	RJL	20	/W
Operating Temperature Range	TJ	-65 to +150
Storage Temperature Range	TSTG	-65 to +150

Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2 x 0.2"(5.0 x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C


Description

SS115 feature

For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering:
260oC/ 10 seconds at terminals