SSD5200

SSD5200 is a kind of N-Channel enhancement-mode quad D-MOS FET driver array.

What comes next is about the absolute maximum ratings of SSD5200 (TA=25 unless otherwise noted).The VDS (drain-source voltage) is +30 Vdc.The VSD (source-drain voltage) is +0.5 Vdc.The VDB (drain-body voltage) is +30 Vdc.The VSB (source-body voltage) is +15 Vdc.The VGS (gate-source voltage) is +25 Vdc.The VGD (gate-drain voltage) is +25 Vdc.The ID (continuous drain current) is 50 mA.The PD (power dissipation (at TA=+25 (free air)) is 300 mW.The PD (total package power dissipation (at or below TA=+25) is 640 mW.The PD (single device power dissipation (at or below TA=+25) is 300 mW.The Top (operating junction temperature range) is from -55 to +85.The Tstg (storage temperature range) is from -55 to +150.

The following is about the electrical characteristics of SSD5200 (TA=25 unless otherwise noted).The minimum BVDS (drain-source breakdown voltage) is 30 V and the typical is 35 V at ID=10A,VGS=VBS=0.The minimum BVSB (source-substrate breakdown voltage) is 15 V at IS=10A,VGB=0,drain open.The maximum IGBS (gate-body leakage current) is 1.0A at VGB=25 V,VDB=VSB=0.The minimum VGS(th) (gate-source threshold voltage) is 0.5 V,the typical is 1.0 V and the maximum is 2.0 V at VDS=VGS,ID=1.0A,VSB=0.The minimum gfs (common-source forward transconductance) is 10 mmhos and the maximum is 12 mmhos at VDS=10 V,ID=20 mA,f=1 KHz,VSB=0.