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SSF25N40A

MOSFET

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SeekIC No. : 00165161 Detail

SSF25N40A: MOSFET

SSF25N40A Data Sheet

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Part Number:
SSF25N40A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 14.3 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.2 Ohms
Package / Case : TO-3PF
Drain-Source Breakdown Voltage : 400 V
Continuous Drain Current : 14.3 A


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V
Low R DS(ON) : 0.162  (Typ.)


Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 400 V
ID Continuous Drain Current (TC=25°C )
 14.3 A
Continuous Drain Current (TC=100°C )
 9.1
IDM Drain Current - Pulsed 100 A
VGS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy 1753 mJ
IAR Avalanche Current 14.3 A
EAR Repetitive Avalanche Energy 10 mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
PD Total Power Dissipation (TC=25 °C)
Linear Derating Factor
 100 W
0.8 W/°C
TJ, TSTG Operating Junction and
Storage Temperature Range		 -55 to +150 °C
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300 °C



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