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SSF4N80AS

Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 A (Max.) @ VDS = 800V`Low RDS(ON) : 2.450 W (Typ.)cSpecifications Symbol Characteristic Value Units VDSS ...

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SeekIC No. : 004503401 Detail

SSF4N80AS: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 A (Max.) @ VDS = 800V`Low RDS...

SSF4N80AS Data Sheet

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Part Number:
SSF4N80AS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 25 A (Max.) @ VDS = 800V
`Low RDS(ON) : 2.450 W (Typ.)c


Specifications

Symbol
Characteristic

Value
Units
VDSS

Drain-to-Source Voltage
800
V
ID
Continuous Drain Current (TC=25 )
3.5
A
Continuous Drain Current (TC=100 )
2.2
IDM
Drain Current-Pulsed
18
A
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
327
mJ
IAR
Avalanche Current
3.5
A
EAR
Repetitive Avalanche Energy
8.5
mJ
dv/dt
Peak Diode Recovery dv/dt
2.0
V/ns
PD
Total Power Dissipation (TC=25 )
Linear Derating Factor
85
0.68
W
W/
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +150
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



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