SSH11N90

Features of the SSH11N90 are:(1)lower RDS(ON);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysilicon gate cell structure;(5)lower input capacitance;(6)extended safe operating area;(7)improved high temperature reailability.

The maximum ratings of the SSH11N90 can be summarized as:(1):the characteristic is drain-source voltage,the symbol is VDSS,the rating is 900,the unit is Vdc;(2):the characteristic is drain-gate voltage(RGS=1.0M),the symbol is VDGR,the rating is 900,the unit is Vdc;(3):the characteristic is gate-source voltage,the symbol is VGS,the rating is ±30,the unit is Vdc;(4):the characteristic is continuous drain current Tc=25,the symbol is ID,the rating is 11.0,the unit is Adc;(5):the characteristic is continuous drain current Tc=100,the symbol is ID,the rating is 8.0,the unit is Adc;(6):the characteristic is drain current pulsed,the symbol is IDM,the rating is 44.0,the unit is Adc;(7):the characteristic is single pulsed avalanche energy,the symbol is EAS,the rating is 3100,the unit is mJ;(8):the characteristic is avalanche current,the symbol is IAS,the rating is 11.0,the unit is A;(9):the characteristic is total power dissipation at Tc=25,the symbol is PD,the rating is 280,the unit is Watts;(10):the characteristic is total power dissipation derate above 25,the symbol is PD,the rating is 2.22,the unit is W/;(11):the characteristic is operating and storage junction temperature range,the symbol is TJ,TSTG,the rating is -55 to +150,the unit is ;(12):the characteristic is maximum lead temp. for soldering purposes,1/8" from case for 5 seconds,the symbol is TL,the rating is 300,the unit is .