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SSH25N40A

MOSFET TO-3P

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SeekIC No. : 00165256 Detail

SSH25N40A: MOSFET TO-3P

SSH25N40A Data Sheet

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Part Number:
SSH25N40A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.2 Ohms
Package / Case : TO-3P
Drain-Source Breakdown Voltage : 400 V


Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 10 A (Max.) @ VDS = 400V
`Low RDS(ON) : 0.162 (Typ.)
 


Specifications

Symbol
Characteristic

Value
Units
VDSS

Drain-to-Source Voltage
400
V
ID
Continuous Drain Current (TC=25 )
25
A
Continuous Drain Current (TC=100 )
15.1
IDM
Drain Current-Pulsed
100
A
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
1429
mJ
IAR
Avalanche Current
25
A
EAR
Repetitive Avalanche Energy
27.8
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
PD
Total Power Dissipation (TC=25 )
Linear Derating Factor
278
2.22
W
W/
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +150
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



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