Features: • 45A, 200V, R DS(on) = 0.065Ω @VGS = 10 V• Low gate charge ( typical 133 nC)• Low Crss ( typical 120 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter SSH45N20B Units VDSS Drain-Sour...
SSH45N20B: Features: • 45A, 200V, R DS(on) = 0.065Ω @VGS = 10 V• Low gate charge ( typical 133 nC)• Low Crss ( typical 120 pF)• Fast switching• 100% avalanche tested• ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Symbol | Parameter | SSH45N20B | Units |
| VDSS | Drain-Source Voltage | 200 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
45 | A |
| 27.8 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 180 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 650 | mJ |
| IAR | Avalanche Current (Note 1) | 45 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 27.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
278 | W |
| 2.22 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
These N-Channel enhancement mode power field effect transistors SSH45N20B are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology SSH45N20B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. SSH45N20B is well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.