SSH6N70A

MOSFET

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SeekIC No. : 00166013 Detail

SSH6N70A: MOSFET

floor Price/Ceiling Price

Part Number:
SSH6N70A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 700 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 1.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 700 V
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.8 Ohms
Package / Case : TO-3P


Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 25 A (Max.) @ VDS = 700V
`Low RDS(ON) : 1.552 (Typ.)



Specifications

Symbol

Characteristic

Value

Units
VDSS

Drain-to-Source Voltage

700
V
ID
Continuous Drain Current (TC=25 )
6
A
Continuous Drain Current (TC=100 )
3.8
IDM
Drain Current-Pulsed
24
A
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
582
mJ
IAR
Avalanche Current
6
A
EAR
Repetitive Avalanche Energy
14
mJ
dv/dt
Peak Diode Recovery dv/dt
2.5
V/ns
PD
Total Power Dissipation (TC=25 )
Linear Derating Factor
140
1.12
W
W/
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +150
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



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