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SSH70N10A

MOSFET NCh/100V/70a/.023Ohm

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SeekIC No. : 00161298 Detail

SSH70N10A: MOSFET NCh/100V/70a/.023Ohm

SSH70N10A Data Sheet

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Part Number:
SSH70N10A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.023 Ohms
Continuous Drain Current : 70 A
Package / Case : TO-3P


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.018 (Typ.)



Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 100 V
ID Continuous Drain Current (TC=25°C )
 70 A
Continuous Drain Current (TC=100°C )
 49.2
IDM Drain Current - Pulsed 280 A
VGS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy 1633 mJ
IAR Avalanche Current 70 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
PD Total Power Dissipation (TC=25 °C)
Linear Derating Factor
 300 W
2.0 W/°C
TJ, TSTG Operating Junction and
Storage Temperature Range		 -55 to +175 °C
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300 °C



Parameters:

Technical/Catalog InformationSSH70N10A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs23 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 4870pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs195nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SSH70N10A
SSH70N10A



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