Position: Home  > All Categories> Integrated Circuits (ICs) > SSM1N45B

SSM1N45B

Features: 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 VLow gate charge ( typical 6.5 nC)Low Crss ( typical 6.5 pF)100% avalanche testedImproved dv/dt capabilityGate-Source Voltage ± 50V guaranteedSpecifications Symbol Parameter SSM1N45B Units VDSS Drain-Source Voltage 450 V ID Dr...

product image

SSM1N45B Picture
See larger image
SeekIC No. : 004503797 Detail

SSM1N45B: Features: 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 VLow gate charge ( typical 6.5 nC)Low Crss ( typical 6.5 pF)100% avalanche testedImproved dv/dt capabilityGate-Source Voltage ± 50V guaranteedSp...

SSM1N45B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SSM1N45B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

0.5A, 450V, R DS(on) = 4.25Ω @VGS = 10 V
Low gate charge ( typical 6.5 nC)
Low Crss ( typical  6.5 pF)
100% avalanche tested
Improved dv/dt capability
Gate-Source Voltage  ± 50V guaranteed


Specifications

Symbol Parameter SSM1N45B Units
VDSS Drain-Source Voltage 450 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 0.5 A
0.32 A
IDM Drain Current - Pulsed (Note 1) 4.0 A
VGSS Gate-Source Voltage ± 50 V
EAS Single Pulsed Avalanche Energy (Note 2) 108 mJ
IAR Avalanche Current (Note 1) 0.5 A
EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C) 0.9 W

Power Dissipation (TL = 25°C)
                     - Derate above 25°C

 2.5 W
0.02 W/°C
TJ, TSTG Operating and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel  enhancement  mode  power  field  effect transistors  are  produced  using  Fairchild's  proprietary, planar, DMOS technology.

This advanced technology SSM1N45B has been especially tailored to minimize  on-state  resistance,  provide  superior  switching performance,  and  withstand  high  energy  pulse  in  the avalanche and commutation mode. These devices are well suited  for  electronic  ballasts  based  on  half  bridge configuration.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
RF and RFID
X3C26P1-30S
1P620S
Switches
US32DMRJ
HBGQ22P-11ET
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Tools
TCP202
G084SN05 V.3
Undefined Category
VI-B63-IU
X27 589
View more