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SSM2301N

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ± 12 V ID@TA=25 Continuous Drain Current3 -2.3 A ID@TA=100 Continuous Drain Current3 -1.5 A IDM Pulsed Drain Current 1,2 -10 A PD@TA=25 Total Power Dissipa...

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SeekIC No. : 004503908 Detail

SSM2301N: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ± 12 V ID@TA=25 Continuous Drain Current3 -2.3 A ID@TA=100 Continuo...

SSM2301N Data Sheet

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Part Number:
SSM2301N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ± 12 V
ID@TA=25 Continuous Drain Current3 -2.3 A
ID@TA=100 Continuous Drain Current3 -1.5 A
IDM Pulsed Drain Current 1,2 -10 A
PD@TA=25 Total Power Dissipation 1.25 W
  Linear Derating Factor 0.01 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

SSM2301N Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The SOT-23 package is widely preferred for commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.




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