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SSM3J117TU

Application• 4 V drive• Low ON-resistance: Ron = 225 m (max) (@VGS = −4 V) Ron = 117 m (max) (@VGS = −10 V)Specifications Characteristic Symbol Rating Unit Drainsource voltage VDS −30 V Gatesource voltage VGSS ± 20 V Dr...

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SSM3J117TU: Application• 4 V drive• Low ON-resistance: Ron = 225 m (max) (@VGS = −4 V) Ron = 117 m (max) (@VGS = −10 V)Specifications Characteristic Symbol Rating Unit ...

SSM3J117TU Data Sheet

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Part Number:
SSM3J117TU
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• 4 V drive
• Low ON-resistance: Ron = 225 m (max) (@VGS = −4 V) Ron = 117 m (max) (@VGS = −10 V)


Specifications

Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDS
−30
V
Gatesource voltage
VGSS
± 20
V
Drain current
DC
ID
−2
A
Pulse
IDP
−4
Drain power dissipation
PD (Note 1)
800
mW
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board. (25.4 mm * 25.4 mm * 0.8 t, Cu Pad: 645 mm2 )
Note 2: Mounted on an FR4 board.  (25.4 mm * 25.4 mm * 1.6 t, Cu Pad: 645 mm2 )




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