ApplicationSmall packageLow on resistance : Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V)Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)PinoutSpecifications Characteristic Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-So...
SSM3K02F: ApplicationSmall packageLow on resistance : Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V)Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)PinoutSpe...
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| Characteristic | Symbol | Rating | Unit | |
| Drain-Source voltage | VDS | 30 | V | |
| Gate-Source voltage | VGSS | ±10 | V | |
| Drain current | DC | ID | 1.0 | A |
| Pulse | IDP | 2.0 | ||
| Drain power dissipation (Ta =25°C) | PD | 200 | mW | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature range | Tstg | -55 to 150 | °C | |