SSM3K04FE

The SSM3K04FE is a kind of field effect transistor. It is silicon N channel MOS type designed for high speed switch applications. It has some features as follows: (1)with built-in gate-source resistor: RGS=1 M typ; (2)2.5 V gate drive; (3)low gate threshold voltage: Vth=0.7 to 1.3 V; (4)small package.

Some absolute maximum ratings of SSM3K04FE have been concluded into several points as follows: (1)drain to source voltage, VDS: 20 V; (2)gate to source voltage, VGSS: 10 V; (3)drain current, ID: 100 mA; (4)power dissipation, PD: 100 mW; (5)channel temperature, Tch: 150; (6)storage temperature range, Tstg: -55 to 150.

Also some electrical characteristics of SSM3K04FE are concluded as follows: (1)gate leakage current, IGSS: 15A max at VGS=10 V, VDS=0; (2)drain cutoff current, IDSS: 1A max at VDS=20 V, VGS=0; (3)drain-source breakdown voltage, V(BR)DSS: 20 V min at ID=100A, VGS=0; (4)gate threshold voltage, Vth: 0.7 V min and 1.3 V max at VDS=3 V, ID=0.1 mA; (5)forward transfer admittance, |Yfs|: 25 mS min and 50 mS typ at VDS=3 V, ID=10 mA; (6)drain-source ON resistance, RDS(ON): 4 typ and 12 max at ID=10 mA, VGS=2.5 V; (7)input capacitance, Ciss: 11.0 pF typ at VDS=3 V, VGS=0, f=1 MHz; (8)reverse transfer capacitance, Crss: 3.3 pF typ at VDS=3 V, VGS=0, f=1 MHz; (9)output capacitance, Coss: 9.3 pF typ at VDS=3 V, VGS=0, f=1 MHz.