ApplicationSuitable for high-density mounting due to compact packageLow on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V)PinoutSpecifications Characteristic Symbol Rating Unit Drain-Source voltage VDS 2...
SSM3K16FU: ApplicationSuitable for high-density mounting due to compact packageLow on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = ...
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| Characteristic | Symbol | Rating | Unit | |
| Drain-Source voltage | VDS | 20 | V | |
| Gate-Source voltage | VGSS | ±10 | V | |
| Drain current | DC | ID | 100 | mA |
| Pulse | IDP | 200 | ||
| Drain power dissipation (Ta =25°C) | PD (Note) | 150 | mW | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature range | Tstg | -55 to 150 | °C | |