SSM6J26FE

The SSM6J26FE is designed as one kind of TOSHIBA field effect transistor that has two points of features:(1)Optimum for high-density mounting in small packages; (2)Low ON resistance: Ron= 230 m (max) (@ VGS= -4 V) and Ron= 330 m (max) (@VGS= -2.5 V), Ron = 980 m (max) (@VGS = -1.8 V). And this device can be used in high speed switching and analog switch applications.

The absolute maximum ratings of the SSM6J26FE can be summarized as:(1)Drain-Source voltage: -20 V;(2)Gate-Source voltage: ±8 V;(3)Drain current DC: -0.5 A;(4)Drain current pulse: -1.5 A;(5)Drain power dissipation (Ta = 25°C): 500 mW;(6)Channel temperature: 150 °C;(7)Storage temperature range: -55 to 150 °C.

The electrical characteristics of SSM6J26FE can be summarized as:(1)Gate leakage current: ±1 A;(2)Drain-Source breakdown voltage: -20 V or -12 V;(3)Drain cut-off current: -1 A;(4)Gate threshold voltage: -0.5 to -1.1 V;(5)Forward transfer admittance: 0.8 s to 1.7 s;(6)Input capacitance: 250 pF;(7)Reverse transfer capacitance: 35 pF;(8)Output capacitance: 45 pF;(9)Switching time (Turn-on time): 14 ns;(10)Switching time (Turn-off time): 15 ns. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .