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SSM6N09FU

Application• Small package• Low Drain-Source ON resistance.: Ron = 0.7 (max) (@VGS = 10 V): Ron = 1.2 (max) (@VGS = 4 V)Specifications Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID 400 ...

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SSM6N09FU: Application• Small package• Low Drain-Source ON resistance.: Ron = 0.7 (max) (@VGS = 10 V): Ron = 1.2 (max) (@VGS = 4 V)Specifications Characteristics Symbol Rating Unit D...

SSM6N09FU Data Sheet

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Part Number:
SSM6N09FU
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Application

• Small package
• Low Drain-Source ON resistance.
: Ron = 0.7 (max) (@VGS = 10 V)
: Ron = 1.2 (max) (@VGS = 4 V)


Specifications

Characteristics Symbol Rating Unit
Drain-Source voltage VDS 30 V
Gate-Source voltage VGSS ±20 V
Drain current DC ID 400 mA
Pulse IDP 800
Drain power dissipation (Ta = 25°C) PD(Note 1) 300 mW
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the  reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm * 25.4 mm * 1.6 t, Cu Pad: 0.32 mm2 * 6) Figure 1.




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