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SSS4N80AS

Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 800VLow R DS(ON) : 2.450 (Typ.)Specifications Symbol Parameter Value Units VDSS Drain-Source Voltage 800 ...

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SeekIC No. : 004505180 Detail

SSS4N80AS: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 800VLow R DS(ON) :...

SSS4N80AS Data Sheet

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Part Number:
SSS4N80AS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 800V
Low R DS(ON) : 2.450  (Typ.)


Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 800 V
ID Drain Current - Continuous (TC = 25°C)
 2.8 A
Drain Current - Continuous (TC = 100°C) 1.8
IDM Drain Current - Pulsed 18 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 314 mJ
IAR Avalanche Current 2.8 A
EAR Repetitive Avalanche Energy 4 mJ
dv/dt Peak Diode Recovery dv/dt 2.0 V/ns
PD Total Power Dissipation (TC=25 OC)
Linear Derating Factor		 40 W
0.32 W/°C
TJ, Tstg Operating Junction and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



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