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SSS6N70A

MOSFET N-CH/700V/4A/1.8OHM

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SeekIC No. : 00151739 Detail

SSS6N70A: MOSFET N-CH/700V/4A/1.8OHM

SSS6N70A Data Sheet

floor Price/Ceiling Price

US $ .62~1.29 / Piece | Get Latest Price
Part Number:
SSS6N70A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.29
  • $1.07
  • $.76
  • $.62
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 700 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 1.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 700 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 1.8 Ohms
Package / Case : TO-3PF


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 700V
Low RDS(ON) : 1.552  (Typ.)


Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 700 V
ID Drain Current - Continuous (TC = 25°C)
 4 A
Drain Current - Continuous (TC = 100°C) 2.5
IDM Drain Current - Pulsed 24 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 560 mJ
IAR Avalanche Current 4 A
EAR Repetitive Avalanche Energy 4 mJ
dv/dt Peak Diode Recovery dv/dt 2.5 V/ns
PD Total Power Dissipation (TC=25 OC)
Linear Derating Factor		 40 W
0.32 W/°C
TJ, Tstg Operating Junction and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



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