Features: • Single 2.7-3.6V Read and Write Operations• Serial Interface Architecture SPI Compatible: Mode 0 and Mode 3• 20 MHz Max Clock Frequency• Superior Reliability Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention• Low Power Consumption...
SST25VF512: Features: • Single 2.7-3.6V Read and Write Operations• Serial Interface Architecture SPI Compatible: Mode 0 and Mode 3• 20 MHz Max Clock Frequency• Superior Reliability End...
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SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF512 SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
The SST25VF512 device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF512 device operates with a single 2.7-3.6V power supply.
The SST25VF512 device is offered in both 8-lead SOIC and 8-contact WSON packages. See Figure 1 for the pin assignments.