Features: • 5.0-Volt Read Operation for 27SF020• 2.7-Volt Read Operation for 27VF020• Superior Reliability Endurance: Minimum 1000 Cycles Greater than 100 years Data Retention• Low Power Consumption Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 2.7V St...
SST27VF020: Features: • 5.0-Volt Read Operation for 27SF020• 2.7-Volt Read Operation for 27VF020• Superior Reliability Endurance: Minimum 1000 Cycles Greater than 100 years Data Retention...
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The SST27VF020 are a 256K x 8 CMOS, many time programmable (MTP) low cost flash memories,manufactured with SST's proprietary, high performance SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The 27SF020/27VF020 can be electrically erased and programmed at least 1000 times using an external programmer.The 27SF020/27VF020 have to be erased prior to programming. The 27SF020/27VF020 conform to JEDEC standard pinouts for byte-wide memories.
Featuring high performance byte programming, the SST27VF020 provide a byte-program time of 20 s. The entire memory can be programmed byte by byte in 5.4 seconds. Designed, manufactured, and tested for a wide spectrum of applications, the 27SF020/27VF020 are offered with an endurance of 1000 cycles.Data retention is rated at greater than 100 years.
The SST27VF020 are suited for applications that require infrequent writes and low power nonvolatile storage. The 27SF020/27VF020 will improve flexibility,efficiency, and performance while matching the low cost in nonvolatile applications that currently use UVEPROMs,OTPs, and mask ROMs.
To meet surface mount and conventional through hole requirements, the SST27VF020 are offered in 32-pin PLCC , 32-pin PDIP and 32-pin TSOP packages.See Figures 1 and 2 for pinouts.