Features: • 2.7 to 3.6 Volt Read Operation• Superior Reliability Endurance: Greater than 1000 Cycles Greater than 100 years Data Retention• Low Power Consumption Active Current: 10 mA (typical) Standby Current: 10 A (typical)• Fast Access Time 90 and 120 ns• Fast...
SST27VF040: Features: • 2.7 to 3.6 Volt Read Operation• Superior Reliability Endurance: Greater than 1000 Cycles Greater than 100 years Data Retention• Low Power Consumption Active Current:...
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The SST27VF040 is a 512K x 8 CMOS, many-time programmable (MTP) low cost flash, manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST27VF040 can be electrically erased and programmed at least 1000 times using an external programmer,e.g., to change the contents of devices in inventory.The SST27VF040 has to be erased prior to programming.The SST27VF040 conforms to JEDEC standard pinouts for byte-wide memories.
Featuring high performance byte programming, the SST27VF040 uses a programming pulse of 10 s. The entire memory can be programmed byte by byte in 7 seconds. Designed, manufactured, and tested for a wide spectrum of applications, the SST27VF040 is offered with a endurance of 1000 cycles. Data retention is rated at greater than 100 years.
The SST27VF040 is suited for applications that require infrequent writes and low power nonvolatile storage. The SST27VF040 will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and
mask ROMs.
To meet surface mount and conventional through hole requirements, the SST27VF040 is offered in 32-pin PLCC, 32-pin PDIP and 32-pin TSOP packages. See Figures 1 and 2 for pinouts