SST28LP040

Features: Single 3.0-Volt Read and Write Operations CMOS SuperFlash EEPROM Technology -Endurance: 250,000 Cycles (typical) -Greater than 100 years Data RetentionMemory Organization: -512K x 8/1M x 4 PCMCIA common memory -1K x 8/2K x 4 attribute memory for user -alterable PCMCIA attribute memoryLow...

product image

SST28LP040 Picture
SeekIC No. : 004505216 Detail

SST28LP040: Features: Single 3.0-Volt Read and Write Operations CMOS SuperFlash EEPROM Technology -Endurance: 250,000 Cycles (typical) -Greater than 100 years Data RetentionMemory Organization: -512K x 8/1M x 4...

floor Price/Ceiling Price

Part Number:
SST28LP040
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Single 3.0-Volt Read and Write Operations CMOS SuperFlash EEPROM Technology
   -Endurance: 250,000 Cycles (typical)
   -Greater than 100 years Data Retention
Memory Organization:
   -512K x 8/1M x 4 PCMCIA common memory
   -1K x 8/2K x 4 attribute memory for user
   -alterable PCMCIA attribute memory
Low Power Consumption:
   -Active Current: 10 mA (typical)
   -Standby Current: 5 A (typical)
Fast Sector Erase and Byte Program
   -Operation
   -Byte Program Time: 30 s (typical)
   -Sector Erase Time: 60 s (typical)
   -Complete Memory Rewrite: 15 sec (typical)
Fast Access Time: 250 ns Sector Erase Capability:
   -256 bytes/512 nibbles per Sector
Selectable single Nibble & dual Nibble Access
PCMCIA Byte-wide or Word wide selection
Latched Address and Data
Hardware and Software Data Protection
   -WP pin Hardware Write Protection
   -7-read-cycle-sequence Software Data Protection
End of Write Detection
   -Toggle Bit
   -Data# Polling
TTL I/O Compatibility
Packages Available
   -40-Pin TSOP (10 mm x 14 mm)



Pinout

  Connection Diagram


Specifications

Temperature Under Bias .............................................................................................. -55 to +125
Storage Temperature .................................................................................................. -65 to +150
D. C. Voltage on Any Pin to Ground Potential ......................................................... -0.5V to VCC+ 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ................................... -1.0V to VCC+ 1.0V
Voltage on A9 Pin to Ground Potential ........................................................................... -0.5V to 14.0V
Package Power Dissipation Capability (Ta = 25) ....................................................................... 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................ 240
Output Short Circuit Current(1) ................................................................................................ 100 mA



Description

The SST28LP040 is organized as a 512K x 8 (bits) common memory array plus a 1K x 8 attribute memory array. The attribute memory can be accessed by asserting REG# or issuing an Enable_Attribute command. Either one nibble or two nibbles in a byte can be read in one cycle with internal decoding of CEL#, CEH#, and HB. The 28LP040 must be configured as a pair per 1Mbyte of PCMCIA application memory. Each byte in the PCMCIA memory map consists of two nibbles, one from each 28LP040 in the pair.

Each SST28LP040 has 4M bits of common memory and 8K bits of attribute memory and is manufactured using SST's proprietary, high performance CMOS SuperFlash EEPROM Technology. The split gate cell design and thick oxide tunneling i njector attain better reliability and manufacturability compared with alternative approaches. The 28LP040 erases and programs with a 3.0 volt only power supply. (VCC: 3.0V to 3.6V)

Figure 1 shows the functional blocks of the SST28LP040, and shows the memory map consisting of common memory array and the attribute memory array. Figure 2 shows the pin assignments for the TSOP package. Pin description and operation modes are described in Tables 1 through 6.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Integrated Circuits (ICs)
Motors, Solenoids, Driver Boards/Modules
Optical Inspection Equipment
Industrial Controls, Meters
Audio Products
Discrete Semiconductor Products
View more