Features: Single 3.0-Volt Read and Write Operations CMOS SuperFlash EEPROM Technology
-Endurance: 100,000 Cycles (typical)
-Greater than 100 years Data Retention
Low Power Consumption:
-Active Current: 10 mA (typical)
-Standby Current: 10 A (typical)
Fast Page-Write Operation
-128 Bytes per Page, 1024 Pages
-Page-Write Cycle: 5 ms (typical)
-Complete Memory Rewrite: 5 sec (typical)
-Effective Byte-write Cycle Time: 39 s (typical)
Fast Access Time: 150 and 200 ns
Latched Address and Data
Automatic Write Timing with Internal
-Vpp Generation
End of Write Detection
-Toggle Bit
-Data# Polling
Hardware and Software Data Protection
TTL I/O Compatibility
JEDEC Standard Byte-wide EEPROM Pinouts
Packages Available
-32-Pin TSOP
-32-Lead PLCC
-32 Pin Plastic DIPPinout
SpecificationsTemperature Under Bias ......................................................................................... -55 to +125
Storage Temperature .............................................................................................. -65 to +150
D. C. Voltage on Any Pin to Ground Potential ..................................................... -0.5V to VCC+ 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ............................... -1.0V to VCC+ 1.0V
Voltage on A9 Pin to Ground Potential ...................................................................... -0.5V to 14.0V
Package Power Dissipation Capability (Ta = 25) ................................................................... 1.0W
Through Hole Lead Soldering Temperature (10 Seconds) ....................................................... 300
Surface Mount Lead Soldering Temperature (3 Seconds) ....................................................... 240
Output Short Circuit Current(1) ............................................................................................ 100 mADescriptionThe SST29LE010 is a 128K x 8 CMOS page mode EEPROM manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturabi lity compared with alternate approaches. The 29LE010 writes with a 3.0-volt-only power supply. (VCC: 3.0V to 3.6V) Internal erase/program is transparent to the user. The 29LE010 conforms to JEDEC standard pinouts for byte-wide memories.
Featuring high performance page write, the SST29LE010 provides a typical byte-write time of 39 sec. The entire memory, i.e., 128K bytes, can be written page by page in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a write cycle. To protect against inadvertent write, the 29LE010 has on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the 29LE010 is offered with a guaranteed page-write endurance of 104 or 103 cycles. Data retention is rated at greater than 100 years.
The SST29LE010 is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the 29LE010 significantly improves performance and reliability, while lowering power consumption, when compared with 5-volt EEPROM or EPROM approaches. The 29LE010 improves flexibility while lowering the cost for program,data, and configuration storage applica-tions.
To meet high density, surface mount requirements,the SST29LE010 is offered in 32-pin TSOP and 32-lead PLCC packages. A 600-mil, 32-pin PDIP package is also available. See Figures 2A and 2B for pinouts.
SST29LE010 Data Sheet
