SST29SF020

Features:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
5.0V-only for SST29SF512/010/020/040
2.7-3.6V for SST29VF512/010/020/040
• Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
• Low Power Consumption:
Active Current: 10 mA (typical)
Standby Current:
30 µA (typical) for SST29SF512/010/020/040
1 µA (typical) for SST29VF512/010/020/040
• Sector-Erase Capability
Uniform 128 Byte sectors
• Fast Read Access Time:
55 ns
70 ns
• Fast Erase and Byte-Program:
Sector-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Byte-Program Time: 14 µs (typical)
Chip Rewrite Time:
1 second (typical) for SST29SF/VF512
2 seconds (typical) for SST29SF/VF010
4 seconds (typical) for SST29SF/VF020
8 seconds (typical) for SST29SF/VF040
• Automatic Write Timing
Internal VPP Generation
• End-of-Write Detection
Toggle Bit
Data# Polling
• TTL I/O Compatibility for SST29SFxxx
• CMOS I/O Compatibility for SST29VFxxx
• JEDEC Standard
Flash EEPROM Pinouts and command sets
• Packages Available
32-pin PLCC
32-pin TSOP (8mm x 14mm)
32-pin PDIP
• Latched Address and Data


Description

The SST29SF020 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS
Small-Sector Flash (SSF) manufactured with SST's proprietary,
high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29SFxxx devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VFxxx devices write (Program or Erase) with a 2.7- 3.6V power supply. These devices conform to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST29SF020 and SST29VFxxx devices provide a maximum Byte-Program time of 20 µsec. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of at least 10,000 cycles. Data retention is rated at greater than 100 years.
The SST29SFxxx and SST29VFxxx devices are suited for applications that require convenient and economical updating
of program, configuration, or data memory. For all system applications, they significantly improve performanceand reliability, while lowering power consumption. They inherently use less energy during Erase and Program than
alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the Super- Flash technology uses less current to program and has a
shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash
technologies. They also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST29SFxxx and SST29VFxxx devices are offered in 32-
pin PLCC and 32-pin TSOP packages. A 600 mil, 32-pin PDIP is also offered for SST29SFxxx devices. See Figures 1, 2, and 3 for pinouts.