SST29VE010A

The SST29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE010A/29LE010A/29VE010A write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE010A/29LE010A/29VE010A conform to JEDEC standard pinouts for bytewide memories.

Featuring high performance page write, the SST29VE010A provide a typical byte-write time of 39 sec. The entire memory, i.e., 128 KBytes, can be written page-by-page in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a write cycle. To protect against inadvertent write, the SST29EE010A/29LE010A/29VE010A have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29VE010A are offered with a guaranteed page write endurance of 10⁴ cycles. Data retention is rated at greater than 100 years.

The SST29VE010A are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST29EE010A/29LE010A/29VE010A significantly improve performance and reliability,while lowering power consumption. The SST29EE010A/29LE010A/29VE010A improve flexibility while lowering the cost for program, data, and configuration storage applications.

To meet high density, surface mount requirements, the SST29EE010A/29LE010A/29VE010A are offered in 32- pin TSOP and 32-lead PLCC packages. A 600-mil, 32-pin PDIP package is also available. See Figures 1 and 2 for pinouts.