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SST31LH021

Features: • Organized as 256K x 8 flash + 128K x 8 SRAM• Single 3.0-3.6V Read and Write Operations• Concurrent Operation Read from or write to SRAM while erase/program Flash• Superior Reliability Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention&#...

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SeekIC No. : 004505254 Detail

SST31LH021: Features: • Organized as 256K x 8 flash + 128K x 8 SRAM• Single 3.0-3.6V Read and Write Operations• Concurrent Operation Read from or write to SRAM while erase/program Flash•...

SST31LH021 Data Sheet

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Part Number:
SST31LH021
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

• Organized as 256K x 8 flash + 128K x 8 SRAM
• Single 3.0-3.6V Read and Write Operations
• Concurrent Operation
  Read from or write to SRAM while erase/program Flash
• Superior Reliability
  Endurance: 100,000 Cycles (typical)
  Greater than 100 years Data Retention
• Low Power Consumption:
  Active Current: 10 mA (typical) for Flash or SRAM Read
  Standby Current: 10 A (typical)
• Sector Erase Capability
  Uniform 4 KByte sectors
• Fast Read Access Times:
  Flash: 70 ns
  SRAM: 25 ns
• Latched Address and Data for Flash
• Flash Fast Sector Erase and Byte Program:
  Sector Erase Time: 18 ms typical
  Bank Erase Time: 70 ms typical
  Byte Program Time: 14 s typical
  Bank Rewrite Time: 4 seconds typical
• Flash Automatic Erase and Program Timing
  Internal VPP Generation
• Flash End of Write Detection
  Toggle Bit
  Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Packages Available
  32-Pin TSOP (8mm x 14mm)
  40-Pin TSOP (10mm x 14mm


Pinout

Connection Diagram


Specifications

Temperature Under Bias ......................................................................................... -55 to +125
Storage Temperature ............................................................................................. -65 to +150
D. C. Voltage on Any Pin to Ground Potential ....................................................-0.5V to VDD+ 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ............................. -1.0V to VDD+ 1.0V
Voltage on A9 Pin to Ground Potential ..................................................................... -0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25) ................................................................. 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) ...................................................... 240
Output Short Circuit Curre(1) ............................................................................................... 50 mA


Description

The SST31LH021 is a 256K x 8 CMOS flash memory bank combined with a 128K x 8 CMOS SRAM memory bank manufactured with SST's proprietary, high performance SuperFlash technology. The SST31LH021 device writes (SRAM or programs or erases flash) with a 3.0-3.6V power supply. The monolithic SST31LH021 device conforms to JEDEC standard pinouts and Software Data Protect (SDP) commands for x8 EEPROMs in TSOP packages.




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