SST36VF1601

The SST36VF1601 is 1M x16 CMOS Concurrent Read/ Write Flash Memory manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST36VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601 device conforms to JEDEC standard pinouts for x16 memories.

Featuring high performance Word-Program, the SST36VF1601 device provides a typical Word-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, the SST36VF1601 device has on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST36VF1601 device is offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.

The SST36VF1601 is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST36VF1601 significantly improves performance and reliability, while lowering power consumption. The SST36VF1601 inherently uses less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SST36VF1601 also improves flexibility while lowering the cost for program, data, and configuration storage applications.