SST36VF1601E

• Organized as 1M x16 or 2M x8
• Dual Bank Architecture for Concurrent Read/Write Operation
16 Mbit Bottom Sector Protection
- SST36VF1601E: 12 Mbit + 4 Mbit
16 Mbit Top Sector Protection
- SST36VF1602E: 4 Mbit + 12 Mbit
• Single 2.7-3.6V for Read and Write Operations
• Superior Reliability
Endurance: 100,000 cycles (typical)
Greater than 100 years Data Retention
• Low Power Consumption:
Active Current: 6 mA typical
Standby Current: 4 A typical
Auto Low Power Mode: 4 A typical
• Hardware Sector Protection/WP# Input Pin
Protects the 4 outermost sectors (8 KWord) in the larger bank by driving WP# low andunprotects by driving WP# high
• Hardware Reset Pin (RST#)
Resets the internal state machine to reading array data
• Byte# Pin
Selects 8-bit or 16-bit mode
• Sector-Erase Capability
Uniform 2 KWord sectors
• Chip-Erase Capability
• Block-Erase Capability
Uniform 32 KWord blocks
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
SST: 128 bits
User: 128 bits
• Fast Read Access Time
70 ns
• Latched Address and Data
• Fast Erase and Program (typical):
Sector-Erase Time: 18 ms
Block-Erase Time: 18 ms
Chip-Erase Time: 35 ms
Program Time: 7 s
• Automatic Write Timing
Internal VPP Generation
• End-of-Write Detection
Toggle Bit
Data# Polling
Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory Interface (CFI)
• JEDEC Standards
Flash EEPROM Pinouts and command sets
• Packages Available
48-ball TFBGA (6mm x 8mm)
48-lead TSOP (12mm x 20mm)
• All non-Pb (lead-free) devices are RoHS compliant

The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST's proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.

Featuring high performance Program, these devices provide a typical Program time of 7 sec and use the Toggle Bit, Data# Polling, or RY/BY# to detect the completion of the Program or Erase operation. To protect against inadvertent write, the devices have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.

These SST36VF1601E are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the devices significantly improve performance and reliability, while lowering power consumption. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.