SST39SF020

Features:

• Organized as 256 K X 8
• Single 5.0V Read and Write Operations
• Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
• Low Power Consumption:
Active Current: 20 mA (typical)
Standby Current: 10 µA (typical)
• Sector Erase Capability
Uniform 4 KByte sectors
• Fast Read Access Time:
70 and 90 ns
• Latched Address and Data
• Fast Sector Erase and Byte Program:
Sector Erase Time: 7 ms (typical)
Chip Erase Time: 15 ms (typical)
Byte Program time: 20 µs (typical)
Chip Rewrite Time: 5 seconds (typical)
• Automatic Write Timing
- Internal Vpp Generation
• End of Write Detection
Toggle Bit
Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
EEPROM Pinouts and command set
• Packages Available
32-Pin PDIP
32-Pin PLCC
32-Pin TSOP (8mm x 14mm)


Description

The SST39SF020 is a 256K x 8 CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF020 device writes (Program or Erase) with a 5.0V-only power supply. The SST39SF020 device conforms to JEDEC standard pinouts for x8 memories.
Featuring high performance byte program, the SST39SF020 device provides a maximum byte-program time of 30 µsec. The entire memory can be erased and programmed byte by byte typically in 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, the SST39SF020 device has on-chip hardware and software data protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, the SST39SF020 device is offered with a guaranteed endurance
of 10,000 cycles. Data retention is rated at greater than 100 years.
The SST39SF020 device is suited for applications that require convenient and economical updating of program,
configuration, or data memory. For all system applications, the SST39SF020 device significantly improves performance and reliability, while lowering power consumption. The SST39SF020 inherently uses less energy during erase and program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application.
Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies.
The SST39SF020 device also improves flexibility while lowering the cost for program, data, and
configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of endurance cycles that have occurred. Therefore the system software or hardware does not have to be modified or derated as is necessary with alternative flash technologies, whose erase and program times increase with accumulated
endurance cycles.
To meet high density, surface mount requirements, the SST39SF020 device is offered in 32-pin TSOP and 32-pin PLCC packages. A 600 mil, 32-pin PDIP is also available. See Figures 1 and 2 for pinouts.