SST39SF512

Features:

• Organized as 64K x8 / 128K x8
• Single 5.0V Read and Write Operations
• Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
• Low Power Consumption:
Active Current: 20 mA (typical)
Standby Current: 10 µA (typical)
• Sector-Erase Capability
Uniform 4 KByte sectors
• Fast Read Access Time:
70 ns
90 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
Sector-Erase Time: 7 ms (typical)
Chip-Erase Time: 15 ms (typical)
Byte-Program Time: 20 µs (typical)
Chip Rewrite Time:
2 seconds (typical) for SST39SF512
3 seconds (typical) for SST39SF010
• Automatic Write Timing
Internal VPP Generation
• End-of-Write Detection
Toggle Bit
Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
Flash EEPROM Pinouts and command sets
• Packages Available
32-pin PLCC
32-pin TSOP (8mm x 14mm)
32-pin PDIP


Description

The SST39SF512/010 are CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary, high performance
CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability
and manufacturability compared with alternate approaches. The SST39SF512/010 devices write (Program
or Erase) with a 5.0V-only power supply. The SST39SF512/010 device conforms to JEDEC standard
pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39SF512/010 devices provide a maximum Byte-Program time of 30 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.
The SST39SF512/010 devices are suited for applications that require convenient and economical updating of program,
configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during erase and program than alternative flash technologies. The total energy consumed is afunction of the applied voltage, current, and time of application.
Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies.
These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST39SF512/010 are offered in 32-pin PLCC packages,
32-pin TSOP, and a 600 mil, 32-pin PDIP is also available. See Figures 1, 2, and 3 for pinouts.