Features: • Organized as 1 M X 16
• Single 2.7V-only Read and Write Operations
• VDDQ Power Supply to Support 5V I/O for SST39VF160Q
- VDDQ not available on SST39VF160
• Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Current: 15 mA (typical)
- Standby Current: 3 µA (typical)
- Auto Low Power Mode: 3 µA (typical)
• Small Sector Erase Capability (512 sectors)
- Uniform 2 KWord sectors
• Block Erase Capability (32 blocks)
- Uniform 32 KWord blocks
• Fast Read Access Time:
- 70 and 90 ns
• Latched Address and Data
• Fast Sector Erase and Word Program:
- Sector Erase Time: 3 ms typical
- Block Erase Time: 7 ms typical
- Chip Erase Time: 15 ms typical
- Word Program time: 7 µs typical
- Chip Rewrite Time: 7 seconds
• Automatic Write Timing
- Internal Vpp Generation
• End of Write Detection
- Toggle Bit
- Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
- EEPROM Pinouts and command set
• Packages Available
- 48-Pin TSOP (12mm x 20mm)
- 6 x 8 Ball TFBGAPinout
SpecificationsTemperature Under Bias ....................................................................................... -55°C to +125°C
Storage Temperature ............................................................................................ -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................................ -0.5V to VDDQ (2) + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ...................... -1.0V to VDDQ (2) + 1.0V
Voltage on A9 Pin to Ground Potential ....................................................................... -0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) .................................................................. 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) ...................................................... 240°C
Output Short Circuit Current(1) .............................................................................................. 50 mADescriptionThe SST39VF160Q/VF160 devices are 1M x 16 CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160Q/VF160 write (Program or Erase) with a 2.7V-only power supply. The SST39VF160Q/VF160 conform to JEDEC standard pinouts for x16 memories.
Featuring high performance word program, the SST39VF160Q/VF160 devices provide a maximum word-program time of 10 µsec. The entire memory can typically be erased and programmed word by word in 7 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, the SST39VF160Q/VF160 have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39VF160Q/VF160 are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.
The SST39VF160Q/VF160 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST39VF160Q/VF160 significantly improve performance and reliability, while lowering power consumption. The SST39VF160Q/VF160 inherently use less energy during Ease and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SST39VF160Q/ VF160 also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of endurance cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose erase and program times increase with accumulated endurance cycles.
To meet high density, surface mount requirements, the SST39VF160Q/VF160 are offered in 48-pin TSOP and 48-pin TFBGA packages. See Figures 1 and 2 for pinouts.
SST39VF160Q Data Sheet
