SST39VF1681

Features:

• Organized as 2M x8
• Single Voltage Read and Write Operations
  2.7-3.6V
• Superior Reliability
  Endurance: 100,000 Cycles (Typical)
  Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz
  Active Current: 9 mA (typical)
  Standby Current: 3 µA (typical)
  Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
  Top Block-Protection (top 64 KByte)
  for SST39VF1682
  Bottom Block-Protection (bottom 64 KByte) for SST39VF1681
• Sector-Erase Capability
  Uniform 4 KByte sectors
• Block-Erase Capability
  Uniform 64 KByte blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
  SST: 128 bits; User: 128 bits
• Fast Read Access Time:
  70 ns
  90 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
  Sector-Erase Time: 18 ms (typical)
  Block-Erase Time: 18 ms (typical)
  Chip-Erase Time: 40 ms (typical)
Byte-Program Time: 7 µs (typical)
• Automatic Write Timing
  Internal VPP Generation
• End-of-Write Detection
  Toggle Bits
  Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
  Flash EEPROM Pinouts and Command sets
• Packages Available
  48-ball TFBGA (6mm x 8mm)
  48-lead TSOP (12mm x 20mm)


Pinout




Specifications

Temperature Under Bias  . . . . . . . . . . . . . . . . . . . . . . . . .  . .  -55°C to +125°C
Storage Temperature   . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .  -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential  . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential  . . -2.0V to VDD+2.0V
Voltage on A9 Pin to Ground Potential   . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . .. .  . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds)   . . . . . . . . . .  .  240°C
Output Short Circuit Current¹   . . . . . . . . .. . . . . . . . . . . . . . . . . . .  . .  ..  . . 50 mA


Description

The SST39VF1681 devices are 2M x8 CMOS Multi-Pur-pose Flash Plus (MPF+) manufactured with SST's propri-etary, high performance CMOS SuperFlash technology.The split-gate cell design and thick-oxide tunneling injec-tor attain better reliability and manufacturability compared with alternate approaches. The SST39VF168x write (Pro-gram or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x8 mem-ories.

Featuring high performance Byte-Program, the SST39VF1681 devices provide a typical Byte-Program time of 7 µsec. These devices use Toggle Bit or Data# Poll-ing to indicate the completion of Program operation. To pro-tect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manu- factured, and tested for a wide spectrum of applications,these devices are offered with a guaranteed typical endur-ance of 100,000 cycles. Data retention is rated at greater than 100 years.