Features: • Organized as 2M x16
• Single 2.7-3.6V Read and Write Operations
• Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
Active Current: 9 mA (typical)
Standby Current: 3 A (typical)
Auto Low Power Mode: 3 A (typical)
• Sector-Erase Capability
Uniform 2 KWord sectors
• Block-Erase Capability
Uniform 32 KWord blocks
• Fast Read Access Time
70 ns
90 ns
• Latched Address and Data
• Fast Erase and Word-Program
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 40 ms (typical)
Word-Program Time: 7 s (typical)
Chip Rewrite Time:15 seconds (typical)
• Automatic Write Timing
Internal VPP Generation
• End-of-Write Detection
Toggle Bit
Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
Flash EEPROM Pinouts and command sets
• Packages Available
48-lead TSOP (12mm x 20mm)
48-ball TFBGA (6mm x 8mm)Pinout
DescriptionThe SST39VF320 devices are 2M x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary,high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF320 write (Program or Erase) with a 2.7-3.6V power supply.
Featuring high performance Word-Program, the SST39VF320 devices provide a typical Word-Program time of 7 sec. The devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, these devices have on-chip hardware and software data protection schemes. Designed,manufactured, and tested for a wide spectrum of applications,the SST39VF320 are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.
The SST39VF320 devices are suited for applications that require convenient and economical updating of program,configuration, or data memory. For all system applications,the SST39VF320 significantly improve performance and reliability, while lowering power consumption. The SST39VF320 inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST39VF320 are offered in 48-lead TSOP and 48-ball TFBGA packages. See Figures 1 and 2 for pinouts.
SST39VF320 Data Sheet
