Features: SpecificationsDescriptionThe SST39VF400 has the following features Organized as 256 K X 16;Single 2.7-3.6V Read and Write Operations;Small Sector-Erase Capability (128 sectors) Uniform 2 KWord sectors;Block-Erase Capability (8 blocks) Uniform 32 KWord blocks;Fast Read Access Time:70 and ...
SST39VF400: Features: SpecificationsDescriptionThe SST39VF400 has the following features Organized as 256 K X 16;Single 2.7-3.6V Read and Write Operations;Small Sector-Erase Capability (128 sectors) Uniform 2 K...
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The SST39VF400 has the following features Organized as 256 K X 16;Single 2.7-3.6V Read and Write Operations;Small Sector-Erase Capability (128 sectors) Uniform 2 KWord sectors;Block-Erase Capability (8 blocks) Uniform 32 KWord blocks;Fast Read Access Time:70 and 90 ns;Latched Address and Data.
The SST39VF400 device is a 256K x 16 CMOS MultiPurpose Flash (MPF) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF400 writes (Programs or Erases) with a 2.7-3.6V power supply. The SST39VF400 conforms to JEDEC standard pinouts for x16 memories.Featuring high performance Word-Program,the SST39VF400 device provides a typical Word-Program time of 14 psec. The entire memory can typically be erased and programmed word-by-word in 4 seconds,when using interface features such as Toggle Bit or Data# Polling to indicate the completion of the Program operation. To protect against inadvertent write, the SST39VF400 has on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39VF400 is offered with a guaranteed endurance of 10,000 cycles. Data retention is rated atgreaterthan 100 years.
The SST39VF400 device is suited for applications that require convenient and economical updating of program,configuration, or data memory. For all system applications, the SST39VF400 significantly improves performance and reliability, while lowering power consumption. The SST39VF400 inherently uses less energy during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage,current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SST39VF400 also improves flexibility while lowering the cost for program, data, and configuration storage applications.