SST39VF512-70-4C-NH

Timing Type :
Access Time : 70 ns
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Packaging : Tube
Memory Type : NOR
Architecture : Sectored
Data Bus Width : 8 bit
Operating Temperature : + 70 C
Interface Type : Parallel
Package / Case : PLCC-32
Maximum Operating Current : 20 mA
Memory Size : 512 Kbit


Pinout




Description

The SST39VF512-70-4C-NH is designed as the multi-purpose flash (MPF) which manufactured with SST's proprietary, high performance CMOS SuperFlash technology.The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This devices write (program or erase) with a 3.0-3.6V power supply and conform to JEDEC standard pinouts for x8 memories.

Features of the SST39VF512-70-4C-NH are:(1)fast read access time:45 ns;(2)sector-erase capability:uniform 4 KByte sectors;(3)low power consumption: active current:10 mA (typical) and standby current:1A(typical);(4)superior reliability:endurance:100,000 cycles(typical) and greater than 100 years data retention;(5)organized as 64K x8/128K x8/256K x8/512K x8;(6)automatic write timing:internal Vpp generation;(7)CMOS I/O compatibility;(8)JEDEC standard: flash EEPROM pinouts and command sets;(9)end-of-write detection:toggle bit and data# polling.

The absolute maximum dtress ratings of the SST39VF512-70-4C-NH can be summarized as:(1)temperature under bias:-55°C to +125°C;(2)storage temperature:-65°C to +150°C;(3)D.C. voltage on any pin to ground potential:-0.5V to VDD+0.5V;(4)transient voltage (<20 ns) on any pin to ground potential:-1.0V to VDD+1.0V;(5)voltage on A9 pin to ground potential:-0.5V to 13.2V;(6)package power dissipation capability (Ta=25°C):1.0W;(7)output short circuit current:50 mA.If you want to know more information such as the electrical characteristics about the SST39VF512-70-4C-NH,please download the datasheet in www.seekic.com .