Features: • Organized as 512 K X 16
• Single 2.7-3.6V Read and Write Operations
• VDDQ Power Supply to Support 5V I/O for SST39VF800Q
- VDDQ not available on SST39VF800
• Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Current: 15 mA (typical)
- Standby Current: 3 µA (typical)
- Auto Low Power Mode: 3 µA (typical)
• Small Sector Erase Capability (256 sectors)
- Uniform 2 KWord sectors
• Block Erase Capability (16 blocks)
- Uniform 32 KWord blocks
• Fast Read Access Time:
- 70 and 90 ns
• Latched Address and Data
• Fast Sector Erase and Word Program:
- Sector Erase Time: 18 ms (typical)
- Block Erase Time: 18 ms (typical)
- Chip Erase Time: 70 ms (typical)
- Word Program time: 14 µs (typical)
- Chip Rewrite Time: 8 seconds (typical)
• Automatic Write Timing
- Internal VPP Generation
• End of Write Detection
- Toggle Bit
- Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
- Flash EEPROM Pinouts and command sets
• Packages Available
- 48-Pin TSOP (12mm x 20mm)
- 6 x 8 Ball TFBGAPinout
SpecificationsTemperature Under Bias .............................................................................................................. -55°C to +125°C
Storage Temperature .................................................................................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ................................................................... -0.5V to VDDQ (2) + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential .............................................. -1.0V to VDDQ (2) + 1.0V
Voltage on A9 Pin to Ground Potential .............................................................................................. -0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) .......................................................................................... 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C
Output Short Circuit Current(1) ....................................................................................................................... 50 mADescriptionThe SST39VF800Q/VF800 devices are 512K x 16 CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800Q/VF800 write (Program or Erase) with a 2.7-3.6V power supply. The SST39VF800Q/ VF800 conform to JEDEC standard pinouts for x16 memories.
Featuring high performance word program, the SST39VF800Q/VF800 devices provide a typical word program time of 14 µsec. The entire memory can typically be erased and programmed word-by-word in 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, the SST39VF800Q/VF800 have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39VF800Q/VF800 are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.
The SST39VF800Q/VF800 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST39VF800Q/VF800 significantly improve performance and reliability, while lowering power consumption. The SST39VF800Q/VF800 inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SST39VF800Q/ VF800 also improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/ Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose erase and program times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST39VF800Q/VF800 are offered in 48-pin TSOP and 48-pin TFBGA packages. See Figures 1 and 2 for pinouts.
SST39VF800 Data Sheet
